XMax Acquired Hexa Creation for Semiconductor Expansion
The purchase gives XMax proprietary vertical GaN power technology to support the expanding power infrastructure needs of AI.
Updated on Oct. 10, 2026 in Business Strategy
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XMax Inc. has signed a definitive agreement to acquire 100% of Hexa Creation Inc., a developer of 1200V vertical gallium nitride (GaN) trench MOSFET technology. This move aims to integrate specialized power semiconductors into the company's broader AI-focused power infrastructure strategy.
Why it matters
XMax is betting on the high-efficiency power needs of AI computing, aiming to capture value as the semiconductor market shifts toward higher-voltage GaN applications. The acquisition provides XMax with exclusive intellectual property licensed from a public university, securing a proprietary foothold in a rapidly developing segment of the power electronics industry.
The global GaN power device market was valued at $355 million in 2024 and is projected to reach $3.0 billion by 2030. XMax is acquiring 100% of Hexa Creation to gain control of its 1200V vertical GaN technology, a critical component for future AI-driven power infrastructure.
The players
XMax Inc.
A California-based technology firm focused on diversifying its semiconductor and power infrastructure portfolio for AI applications.
Hexa Creation Inc.
A specialized developer of vertical gallium nitride power semiconductors holding exclusive intellectual property licenses.
The details
Hexa Creation specializes in native 1200V vertical GaN trench MOSFETs, a technology that offers higher power density compared to traditional silicon-based alternatives. By absorbing these assets, XMax intends to move beyond discrete devices into more complex power modules and system-level solutions. The firm's SEC filings indicate this integration is a core component of its long-term strategy to diversify its hardware portfolio and supply the hardware needed for high-load AI computing environments.
Timeline
The global GaN market value was $355 million in 2024.
A market report by Yole Group was published in October 2025.
The definitive share purchase agreement was signed on October 9, 2026.
The global GaN market is projected to grow to $3.0 billion by 2030.
Market Landscape
This acquisition follows the industry-wide trend of vertical integration as companies rush to capture the projected 42% compound annual growth rate for GaN power devices. XMax's move mirrors broader efforts by power infrastructure providers to secure proprietary 1200V-class technology as AI demand rises.
Operators should monitor whether this move leads to industry-wide shortages or pricing shifts for specialized power components as AI-focused firms hoard vertical GaN supply. Businesses relying on high-efficiency power modules should assess their supplier redundancy plans to mitigate potential disruption.
The takeaway
The acquisition of Hexa Creation highlights a growing strategic premium on vertical GaN technology for high-voltage power infrastructure. Monitor regulatory filings for information on how XMax intends to scale production of these components in the coming fiscal year.
Further reading
For more on how firms are positioning their portfolios, see our Business Strategy section.
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